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半導體製造技術的尖端化始於旋寶好化學的精密技術
半導體集成回路只是薄薄的小硅片,但其內部裝載數萬乃至數千萬個電路元件(三級管、二級管、電阻、電容器)。
這些電路元件準確被連接成為進行數據處理的”邏輯回路”和儲存數據的”存儲器”
.
在半導體基板上面細微複雜的圖案連接成這些元件
,
就像洗相片時使用的膠卷那樣
,
把這些圖案照相後縮小在膜上.這些在基板上精密連接電路元件形成的膜多張重疊形成半導體集成回路.旋寶好化學的光刻膠
,顯像液,研磨劑,BARC、TCM等就是在此工藝中使用的必需品.旋寶好化學為給顧客最大滿意,堅持不停止超精密技術產品的研究開發。
Photoresist (光刻膠)
光刻膠是照射特定波長的光後
,
利用物理、化學變化轉印特定圖案時使用的物質,是使用於半導體電路工藝中光刻工藝的核心技術
BARC (Bottom Anti-Reflective Coating)
是塗抹於光刻膠下面的反射塗層,能夠改善在半導體電路形成過程中因半導體基板反射曝光發生的Standing
wave、notching等問題。
TCM (Top Coating Material)
Immersion是在透光鏡和PR之間注入折射率大於空氣的水,以增加焦點深度,提高步進曝光機分辨能力的技術,使用於50mm以下圖案的形成.TCM是塗抹在PR上部的材料,用來在Immersion工藝中防止PR被透光鏡和PR之間的水溶解。
CMP Slurry (研磨劑)
在半導體的高度集成化過程中
,
為在超小的面積上形成回路
,重疊多層回路的同時縮小回路間間隔.但如果間隔太小,就很難克服各不同位置的高度差
,重疊多層,所以形成一個層后通過化學,物理Polishing平整后再形成下一個層。
Thinner
在TFT-LCD及半導體製造過程中,能夠在短時間內有效清除玻璃及硅片邊緣和背面的多餘光刻膠,也能夠清除附著在裝備上的Particle。
Stripper
在TFT-LCD及半導體製造過程中,使用於清除多余光刻膠。
Etchant (蝕刻劑)
蝕刻劑是石印(Photolithography)工藝的核心材料,通過化學反應清除Thin
film特定部位的物質.
Silicone materials for LED (LED用有機硅浸漬料)
LED封裝(Packaging)工藝的核心材料,用來提高光提取率,實現LED的高亮度,保護電路元件不受外部環境(水分或氧氣等)影響.是在Encapsulant及Lens
molding工藝中用來實現熱穩定性,耐光性,高透明性的硅樹脂材料。
XBH
is
Supplier of
lithographic products including ultra-pure negative / positive photoresist
and planarizing coating for the microelectronic, optoelectronic and graphic
arts industries and other customer-specific specialty coatings
XBH provide a negative
acting resist that is soluble in acetone and has
an easy to use water
soluble developer. It's really a negative acting
positive resist. It is
very easy to use.
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|
| |
Photoresist |
Thickness
µm |
Wavelength |
Aspect Ratio |
Primary Uses |
|
B series |
|
|
193 |
|
contact holes, line/space |
|
E and F series |
|
|
248 |
|
multi-purpose, back end |
|
JS 2184 |
Positive |
0.6-1.2 |
i |
Ultra high |
line/space, contact holes |
|
JS 812 |
Positive |
0.6-3.0 |
i |
High |
line/space, contact holes |
|
JS 814 |
Positive |
0.8-1.4 |
i |
Mid-range |
line/space, contact holes |
|
JS 1011 |
Positive |
2-4.5 |
i |
High aspect ratio |
line/space |
|
N7000 |
Negative |
0.6-10 |
i |
|
ion implant, high speed |
|
MPG 3000 |
Negative |
1.5-10 |
i |
|
lift off |
|
MPG 6000 |
Negative |
0.75-1.5 |
i |
High |
lift off |
|
4400 |
Positive |
1-2.5 |
ghi |
|
general purpose |
|
4400-G |
Positive |
0.8-5 |
ghi |
|
general purpose, high speed |
|
2600 |
Positive |
0.4-4 |
ghi |
|
general purpose, wet etch |
|
5000 |
Negative |
2.5-5.5 |
gh |
|
|
|
Q5000 series |
Positive |
2-55 |
gh |
2:1 |
|
|
5600 series |
Positive |
2-55 |
gh |
2:1 |
|
|
1030 series |
Positive |
3-50 |
ghi |
3:1 |
|
|
20Y |
Positive |
4-50 |
ghi |
3:1 |
plating and etch applications |
|
60Y |
Positive |
15-65 |
gh |
3:1 |
plating and etch applications |
|
M-40 |
|
6-25 |
gh |
2:1 |
|
|
M-50 |
|
20-30 |
gh |
2:1 |
|
|
6 series |
Positive |
3-5 |
ghi |
2:1 |
|
|
23 series |
Positive |
5-20 |
ghi |
4:1 |
Cu RDL and TSV applications |
|
50 series |
Positive |
20-100 |
ghi |
4:1 |
etch and plating applications |
|
235 series |
Negative |
20-120 |
ghi |
6:1 |
|
Absorbance Modulation Optical Lithography
Instituto de Energia Solar1 – Universidad
Politecnica de Madrid – Negative Resist Research – Summer 2003
A novel
self-assembled and maskless technique for highly uniform arrays of
nanon holes and nano-pillars
Etch Rates For
Micromachining Processing
If you don't find what you're looking for,
Contact Us. We may have
a suitable product that's not listed, or we may be able to
develop a material to fit your specific needs.
Tel : (02)2217-3442 / Fax : (02)2704-4070
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