廠商登入區員工登入區學術研究機構登入區    
 

  
 

 

正型光阻劑

 

負型光阻劑
提高光阻製程溫度
  光阻洗邊液
  平坦化阻劑
  Spin-On Glass
  Spin-On Dopants
  顯像液
  光阻剝離液
  高透明度聚硫亞氨光阻
   
   
   
   
   
   
   
   
   
   
   
   
   
   

   

   
 
 
 
To enhance mechanical and chemical stability of resist pattern, it is recommended to employ silylation process.

Silylation produces following changes in properties of silylated polymers:
increase of density
slight volume expansion
enhancement of thermal resistance
resistance to attack by common solvents
resistance to attack by oxygen plasma due to formation of surface layer of silicon oxide

Vapor silylation is as effective as silylation by dipping in silylating solution and applicable at the same time polymer curing is performed.

By forming a layer of photoresist on the substrate, and exposing and developing the photoresist from the portions of the layer of photoresist remaining after the development. After development of the layer of photoresist, the substrate is treated with a silylation compound capable of cross-linking the photoresist and of promoting adhesion of the photoresist to the substrate.
A preferred silylation compound is
DC5-800

To apply silylation on photoresist is easy , just like HMDS applied on substract for adhesion promoting.

Process for silylation for water proof coating

Substrate was vapor treated with DC5-800 at 145°C. and 1 Torr for 2 minutes. Following this silylation pre-treatment, the wafer was allowed to stand for one minute to cool,The pretreatment is purpose for bonding improvement with AU ( maybe need, maybe not need)Then 2 ml of PR1-1000A ( or NR7-1000P)photoresist was spin coated on to the wafer-condition per instruction
Soft baked -condition per instruction
Development -condition per instruction
Rinsing for 30 seconds in deionized water and air drying

The wafer was then vapor treated with
DC5-800 at 145
°C. and 1 Torr for 2 minutes to stabilize the elements.

Top Surface Imaging Through Vapor Phase Silylation




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