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 返回首頁 > 產品與技術 > 正型光阻
 
 
正性光刻胶曝光区域容易溶解于显影液。特性:分辨率高、台阶覆盖好、对比度好。
光刻胶能形成图形的最小光刻尺寸分传统光刻胶和化学放大光刻胶。
传统光刻胶。用于
I线
(365nm)、H线(405nm)G线(436nm)关键尺寸在0.35μm及其以上。
化学放大光刻胶
CAR适用深紫外线(DUV)波长的光刻胶KrF(248nm)ArF(193nm)


目前市場上的正光阻會碰到無法清洗乾淨的問題 , 和你目前使用的正型光阻比較, 旋寶好化學
PR1阻有下列優勢


更好的解析能力
更好的線寛控制

有效防止反射引起的痕跡和凹陷 
沒有粘著問題,不需使用
HMDS , RIE,容易去除,可做為金屬黏著和犧牲層

                                  

旋寶好化學PR1光阻不容易老化硬化,在lift-off容易去除,耐溫130°C
PR1經過Silylation Process,可耐溫250°C
 

Applications: Microfabrication using dry etching, wet etching, plating or ion implantation processes.

Properties: Superb adhesion without application of adhesion promoters.

Thickness range: 0.7-15.0 µm

Advantages over other commercial positive resists:
superior photospeed, enhancing exposure throughput
faster development time
application of a single developer for both negative and positive resists
elimination of use of adhesion promoters
ease of removal in acetone after RIE process

Positive Resists

Resist
PR1-1000A
PR1-2000A
PR1-4000A

Thickness
0.7µm - 2.1µm
  電漿蝕刻 製程
1.4µm - 4.2µm
2.8µm - 15.0µm
 微流道/微機電 製程

Temperature resistance < 130°C


氨基磺酸鎳 (Nickel Aminosulfonate)
硼酸(緩衝液)
溴化鎳

Characterization of an Ultra-Thick Positive Photoresist for Electroplating Applications
Image Reversal Of Positive Potoresists
A generalized CMOS-MEMS platform for micromechanical resonators monolithically integrated with circuits
M 面氮化銦鎵發光二極體元件製程與分析
Design and Fabrication of an Array Microejector Driven by a Shear-Mode Piezoelectric Actuator
A silicon-based MEMS vibrating mesh nebulizer for inhaled drug delivery
A Highly Selective Low Pressure Inductively Coupled Plasma Etching Process for GaAs Using Photoresist Mask
CMOS MEMS Fabrication Technologies and Devices
以高分子作為感應偶合電漿反應離子蝕刻側壁保護層以製作單晶矽懸浮微結構之快速製程平台研發
 


If you don't find what you're looking for, Contact Us. We may have a suitable product that's not listed, or we may be able to develop a material to fit your specific needs. Tel : (02)2217-3442 / Fax : (02)2704-4070
 

 

 

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