正性光刻胶曝光区域容易溶解于显影液。特性：分辨率高、台阶覆盖好、对比度好。
光刻胶能形成图形的最小光刻尺寸分传统光刻胶和化学放大光刻胶。
传统光刻胶。用于I线（365nm）、H线（405nm）和G线（436nm），关键尺寸在0.35μm及其以上。
化学放大光刻胶CAR。适用深紫外线（DUV）波长的光刻胶。KrF（248nm）和ArF（193nm）。
目前市場上的正光阻會碰到無法清洗乾淨的問題 ,
和你目前使用的正型光阻比較,
XBH的PR1光阻有下列優勢
更好的解析能力
更好的線寛控制
有效防止反射引起的痕跡和凹陷
沒有粘著問題,不需使用HMDS , RIE後,容易去除.
XBH
的PR1光阻不容易老化硬化,在lift-off後容易去除,耐溫130°C
PR1經過Silylation
Process後,可耐溫250°C
Applications:
Microfabrication using dry etching, wet etching, plating or
ion implantation processes.
Properties: Superb adhesion without application of adhesion
promoters.
Thickness range: 0.7-15.0 µm
Advantages over other commercial positive resists:
superior photospeed, enhancing exposure throughput
faster development time
application of a single developer for both negative and
positive resists
elimination of use of adhesion promoters
ease of removal in acetone after RIE process
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Positive Resists |
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Resist
PR1-1000A
PR1-2000A
PR1-4000A |
Thickness
0.7µm - 2.1µm
1.4µm - 4.2µm
2.8µm - 15.0µm |
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Temperature resistance
<
130°C |
Characterization of an Ultra-Thick
Positive Photoresist for Electroplating Applications
Image Reversal Of Positive Potoresists
If you don't find what you're looking for,
Contact Us.
We may have a suitable product that's not listed, or we may be
able to develop a material to fit your specific needs.
Tel : (02)2217-3442 / Fax : (02)2704-4070
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