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 返回首頁 > 產品與技術 > 正型光阻
 
 
正性光刻胶曝光区域容易溶解于显影液。特性:分辨率高、台阶覆盖好、对比度好。
光刻胶能形成图形的最小光刻尺寸分传统光刻胶和化学放大光刻胶。
传统光刻胶。用于
I线
(365nm)、H线(405nm)G线(436nm),关键尺寸在0.35μm及其以上。
化学放大光刻胶
CAR。适用深紫外线(DUV)波长的光刻胶。KrF(248nm)ArF(193nm)


目前市場上的正光阻會碰到無法清洗乾淨的問題 , 和你目前使用的正型光阻比較
, XBHPR1阻有下列優勢


更好的解析能力
更好的線寛控制

有效防止反射引起的痕跡和凹陷 
沒有粘著問題,不需使用
HMDS , RIE,容易去除.

XBH PR1光阻不容易老化硬化,在lift-off容易去除,耐溫130°C
PR1
經過Silylation Process,可耐溫250°C
 

Applications: Microfabrication using dry etching, wet etching, plating or ion implantation processes.

Properties: Superb adhesion without application of adhesion promoters.

Thickness range: 0.7-15.0 µm

Advantages over other commercial positive resists:
superior photospeed, enhancing exposure throughput
faster development time
application of a single developer for both negative and positive resists
elimination of use of adhesion promoters
ease of removal in acetone after RIE process

Positive Resists

Resist
PR1-1000A
PR1-2000A
PR1-4000A

Thickness
0.7µm - 2.1µm
1.4µm - 4.2µm
2.8µm - 15.0µm

Temperature resistance < 130°C

Characterization of an Ultra-Thick Positive Photoresist for Electroplating Applications
Image Reversal Of Positive Potoresists
 


If you don't find what you're looking for, Contact Us. We may have a suitable product that's not listed, or we may be able to develop a material to fit your specific needs. Tel : (02)2217-3442 / Fax : (02)2704-4070
 

 

 

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