Polyimide films are
frequently used as a "stress buffer" or protective overcoat
for semiconductors. Polyimide stress buffers are typically 4-6
microns in thickness, and protect the delicate thin films of
metal and oxides on the chip surface from damage during
handling and from induced stress after encapsulation in
plastic molding compound. Patterning is simple and
straightforward. Because of the low defect density and robust
plasma etch resistance inherent with polyimide films, a
"single mask" process can be implemented, which permits the
polyimide layer to function both as a stress buffer and as a
dry etch mask for the underlying silicon nitride
passivation
layer. In addition, polyimide layers have been readily used
for flip chip
bonding
applications, including both C-4 and dual-layer bond pad
redistribution (BPR) applications.
Polyimides may also serve as an
interlayer dielectric in both semiconductors and thin
film
multichip modules (MCM-D's). The low dielectric constant, low
stress, high modulus, and inherent ductility of polyimide
films make them well suited for these multiple layer
applications. Other uses for polyimides include alignment
and/or dielectric layers for displays, and as a structural
layer in micro-machining applications. In the fabrication of
microelectronic devices, polyimides are typically applied as a
liquid onto a substrate, and then thermally cured into a
smooth, rigid, intractable polymeric film or structural layer.
The film can be patterned using a lithographic (photographic)
process in conjunction with liquid photoresists.
Photosensitive polyimides permit the
patterning of relatively fine features. An aspect ratio of 1
to 1 can be achieved in fully cured films.
The basic process involves the spin coating of the polyimide
and a drying step, using one or more in-line hot plates or a
convection oven. The polyimide layer is then exposed on a
standard I or G line lithography tool. A negative tone photo
mask is usually required since most photodefinable polyimides
are negative acting. After imaging, the wafer is developed on
a traditional track line. After develop and rinse the
polyimide layer is cured to both imidize the film and remove
the photo package.
High Aperture Ratio Technology : Organic Passivation Layer
Polyimide Coating for Liquid Crystal
Alignment :
Our proprietary PI technology makes it possible to meet all
the requirements of the TFT-LCDs.
Features such as enhanced printability, thickness and
uniformity are pleasant experience to customers.Currently, material for TN mode operation is available
anticipating new additions for TFT and STN other than TN mode.
The
thickness or whether automatic molds or conventional molds are
used. Flowability and curing time can be controlled without
restriction.
|
Condition |
Unit |
Value |
Tensile strength |
Room temp |
kg/mm2 |
12 |
Tensile modulus |
280 |
Tensile elongation |
% |
65 |
Volume resistivity |
1MHz
Room
temp |
Ω-cm |
1×1016 |
Dielectric constant |
- |
2.9 |
Dissipation factor |
- |
0.010 |
Dielectric Strength |
Room temp |
KV/mm |
260 |
Thermal decomposition
Temperature |
5°C/min |
°C |
550 |
Water absorption |
24hr
Room
temp.24hr |
% |
0.3 |
Adhesion to SiO2 |
After PCT |
|
0/100 |
>
常見問答
New positive-type
photosensitive polyimide having sulfo groups![](icoLeaf.gif)
An
Optimized Process for Ultrathick Photosensitive Polyimide
Applications![](icoLeaf.gif)
New
Negative-type Photosensitive Alkaline-developable
Semi-aromatic Polyimides with Low Dielectric Constants Based
on Poly(amic acid) from Aromatic Diamine Containing Adamantyl
Units and Alicyclic Dianhydrides, A Cross-linker, and A
Photoacid Generator![](icoLeaf.gif)
If you don't find what you're looking for,
Contact Us.
We may have a suitable product that's not listed, or we may be
able to develop a material to fit your specific needs.
Tel : (02)2217-3442 / Fax : (02)2704-4070
|
|