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                  Polyimide films are 
                  frequently used as a "stress buffer" or protective overcoat 
                  for semiconductors. Polyimide stress buffers are typically 4-6 
                  microns in thickness, and protect the delicate thin films of 
                  metal and oxides on the chip surface from damage during 
                  handling and from induced stress after encapsulation in 
                  plastic molding compound. Patterning is simple and 
                  straightforward. Because of the low defect density and robust 
                  plasma etch resistance inherent with polyimide films, a 
                  "single mask" process can be implemented, which permits the 
                  polyimide layer to function both as a stress buffer and as a 
                  dry etch mask for the underlying silicon nitride 
                  passivation 
                  layer. In addition, polyimide layers have been readily used 
                  for flip chip 
                  bonding 
                  applications, including both C-4 and dual-layer bond pad 
                  redistribution (BPR) applications. 
                  
                  Polyimides may also serve as an 
                  interlayer dielectric in both semiconductors and thin 
                  film 
                  multichip modules (MCM-D's). The low dielectric constant, low 
                  stress, high modulus, and inherent ductility of polyimide 
                  films make them well suited for these multiple layer 
                  applications. Other uses for polyimides include alignment 
                  and/or dielectric layers for displays, and as a structural 
                  layer in micro-machining applications. In the fabrication of 
                  microelectronic devices, polyimides are typically applied as a 
                  liquid onto a substrate, and then thermally cured into a 
                  smooth, rigid, intractable polymeric film or structural layer. 
                  The film can be patterned using a lithographic (photographic) 
                  process in conjunction with liquid photoresists. 
                  
                  
                  Photosensitive polyimides permit the 
                  patterning of relatively fine features. An aspect ratio of 1 
                  to 1 can be achieved in fully cured films. 
                  The basic process involves the spin coating of the polyimide 
                  and a drying step, using one or more in-line hot plates or a 
                  convection oven. The polyimide layer is then exposed on a 
                  standard I or G line lithography tool. A negative tone photo 
                  mask is usually required since most photodefinable polyimides 
                  are negative acting. After imaging, the wafer is developed on 
                  a traditional track line. After develop and rinse the 
                  polyimide layer is cured to both imidize the film and remove 
                  the photo package. 
                   
                
				   
                  High Aperture Ratio Technology : Organic Passivation Layer 
                 
                 
                
                  
                  Polyimide Coating for Liquid Crystal 
                  Alignment : 
                 
                  
                  
                  
                  Our proprietary PI technology makes it possible to meet all 
                  the requirements of the TFT-LCDs. 
                  
                  Features such as enhanced printability, thickness and 
                  uniformity are pleasant experience to customers.Currently, material for TN mode operation is available 
                  anticipating new additions for TFT and STN other than TN mode. 
                 
                
                   
                  The 
                  thickness or whether automatic molds or conventional molds are 
                  used. Flowability and curing time can be controlled without 
                  restriction. 
				   
                  
                  
                  
                    
                      | 
                       
                         | 
                      
                       
                      
                      
                      Condition  | 
                      
                       
                      
                      
                      Unit  | 
                      
                       
                      
                      
                      Value  | 
                     
                    
                      | 
                       
                      
                      
                      Tensile strength  | 
                      
                       
                      
                      
                      Room temp  | 
                      
                       
                      
                      
                      kg/mm2  | 
                      
                       
                      
                      
                      12  | 
                     
                    
                      | 
                       
                      
                      
                      Tensile modulus  | 
                      
                       
                      
                      
                      280  | 
                     
                    
                      | 
                       
                      
                      
                      Tensile elongation  | 
                      
                       
                      
                %  | 
                      
                       
                      
                      
                      65  | 
                     
                    
                      | 
                       
                      
                      
                      Volume resistivity  | 
                      
                       
                      
                      1MHz 
					  Room 
                      temp  | 
                      
                       
                      
              
                          
                  
                      Ω-cm  | 
                      
                       
                      
                      
                      1×1016  | 
                     
                    
                      | 
                       
                      
                      
                      Dielectric constant  | 
                      
                       
                      
					  
                      -  | 
                      
                       
                      
                      
                      2.9  | 
                     
                    
                      | 
                       
                      
                      
                      Dissipation factor  | 
                      
                       
                      
					  
                      -  | 
                      
                       
                      
                      
                      0.010  | 
                     
                    
                      | 
                       
                      
                      
                      Dielectric Strength  | 
                      
                       
                      
                      
                      Room temp  | 
                      
                       
                      
                      
                      KV/mm  | 
                      
                       
                      
                      
                      260  | 
                     
                    
                      | 
                       
                      
                      
                      Thermal decomposition 
                      Temperature  | 
                      
                       
                      
                      
                      5°C/min  | 
                      
                       
                          
                      °C  | 
                      
                       
                      
                      
                      550  | 
                     
                    
                      | 
                       
                      
                      
                      Water absorption  | 
                      
                       
                      
                      
                      24hr 
                      
                      Room 
                      
                      temp.24hr  | 
                      
                       
                      
                %  | 
                      
                       
                      
                      
                      0.3  | 
                     
                    
                      | 
                       
                      
                      
                      Adhesion to SiO2  | 
                      
                       
                      
                      
                      After PCT  | 
                      
                       
                      
                      
                         | 
                      
                       
                      
                      
                      0/100  | 
                     
                   
                   
                  
                   
                                                        
                  
                   
                                                        
              
                  
                  > 
              
              
              常見問答 
                  
                  New positive-type 
                  photosensitive polyimide having sulfo groups  
                  
                  An 
                  Optimized Process for Ultrathick Photosensitive Polyimide 
                  Applications  
                  
                  New 
                  Negative-type Photosensitive Alkaline-developable 
                  Semi-aromatic Polyimides with Low Dielectric Constants Based 
                  on Poly(amic acid) from Aromatic Diamine Containing Adamantyl 
                  Units and Alicyclic Dianhydrides, A Cross-linker, and A 
                  Photoacid Generator  
                                                          
                                                        
                  
                                                        
                   
                      
                  
                                    
                                    
    If you don't find what you're looking for,
              
    
                  Contact Us. 
                  We may have a suitable product that's not listed, or we may be 
                  able to develop a material to fit your specific needs. 
                                    
                                    Tel : (02)2217-3442 / Fax : (02)2704-4070 
                    
                  
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