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Alignment layer
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   

   

   
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Polyimide films are frequently used as a "stress buffer" or protective overcoat for semiconductors. Polyimide stress buffers are typically 4-6 microns in thickness, and protect the delicate thin films of metal and oxides on the chip surface from damage during handling and from induced stress after encapsulation in plastic molding compound. Patterning is simple and straightforward. Because of the low defect density and robust plasma etch resistance inherent with polyimide films, a "single mask" process can be implemented, which permits the polyimide layer to function both as a stress buffer and as a dry etch mask for the underlying silicon nitride passivation layer. In addition, polyimide layers have been readily used for flip chip bonding applications, including both C-4 and dual-layer bond pad redistribution (BPR) applications.

Polyimides may also serve as an interlayer dielectric in both semiconductors and thin film multichip modules (MCM-D's). The low dielectric constant, low stress, high modulus, and inherent ductility of polyimide films make them well suited for these multiple layer applications. Other uses for polyimides include alignment and/or dielectric layers for displays, and as a structural layer in micro-machining applications. In the fabrication of microelectronic devices, polyimides are typically applied as a liquid onto a substrate, and then thermally cured into a smooth, rigid, intractable polymeric film or structural layer. The film can be patterned using a lithographic (photographic) process in conjunction with liquid photoresists.

Photosensitive polyimides permit the patterning of relatively fine features. An aspect ratio of 1 to 1 can be achieved in fully cured films.
The basic process involves the spin coating of the polyimide and a drying step, using one or more in-line hot plates or a convection oven. The polyimide layer is then exposed on a standard I or G line lithography tool. A negative tone photo mask is usually required since most photodefinable polyimides are negative acting. After imaging, the wafer is developed on a traditional track line. After develop and rinse the polyimide layer is cured to both imidize the film and remove the photo package.

High Aperture Ratio Technology : Organic Passivation Layer



Polyimide Coating for Liquid Crystal Alignment :

Our proprietary PI technology makes it possible to meet all the requirements of the TFT-LCDs.
Features such as enhanced printability, thickness and uniformity are pleasant experience to customers.Currently, material for TN mode operation is available anticipating new additions for TFT and STN other than TN mode.



The thickness or whether automatic molds or conventional molds are used. Flowability and curing time can be controlled without restriction.
 

 

Condition

Unit

Value

Tensile strength

Room temp

kg/mm2

12

Tensile modulus

280

Tensile elongation

%

65

Volume resistivity

1MHz Room temp

Ω-cm

1×1016

Dielectric constant

-

2.9

Dissipation factor

-

0.010

Dielectric Strength

Room temp

KV/mm

260

Thermal decomposition
Temperature

5°C/min

°C

550

Water absorption

24hr Room temp.24hr

%

0.3

Adhesion to SiO2

After PCT

 

0/100



> 常見問答
New positive-type photosensitive polyimide having sulfo groups
An Optimized Process for Ultrathick Photosensitive Polyimide Applications
New Negative-type Photosensitive Alkaline-developable Semi-aromatic Polyimides with Low Dielectric Constants Based on Poly(amic acid) from Aromatic Diamine Containing Adamantyl Units and Alicyclic Dianhydrides, A Cross-linker, and A Photoacid Generator
 


If you don't find what you're looking for, Contact Us. We may have a suitable product that's not listed, or we may be able to develop a material to fit your specific needs. Tel : (02)2217-3442 / Fax : (02)2704-4070
 

 

 

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