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电子束能量越高，波长越短。一般为0.1nm。利用尺寸小的电子束在光刻胶上直写，不需掩膜板。可用电磁场聚焦。用于掩膜板的制作。光刻胶为PMMA。可作10nm的解决方案。
電子束光刻（electron
beam lithography）是一種以電子束為工具的奈米制作技術，它是利用電子束在光阻上繪製奈米圖案，再經後續顯影步驟，即可製作出線寬僅數奈米的高解析結構。
XBH
提供各種固含量、分子量的PMMA
（分子量為950K,600K,200，50K等）,PMMA/MA聚合物，耐刻蝕電子束正光阻，高解析度電子束正光阻，混合曝光用正光阻，LIGA用光阻等
XBH E-beam resist has been designed to
maximize the throughput and resolution capabilities of electron
beam lithography. Its attributes of high sensitivity, greater
process tolerance, and easy alignment result in efficient use of
expensive equipment. Because this resist is novolac based and
aqueous alkaline developable, it is non-swelling, and thus
provides greater resolution and critical dimension control.
Electron-beam lithography (EBL) is a lithographic process where a
tightly focused beam of highly accelerated (10-50kV) electrons is
used to define high resolution patterns .Unlike contact printing
photolithography, EBL does not need a physical mask to transfer
patterns into the resist.in electron-beam resist.
EBL is more suitable for defining high resolution (sub-micron)
features as compared to exposing large areas ( >
100 um).
EBL resolution (typically 10 nm in diameter).
During
electron-beam exposure, highly energetic electrons provide the
activation energy to break the weak Si-H bonds and promote
formation of the stronger siloxane (Si-O-Si) bonds. Electron-beam
irradiation thus causes resist cross-linking. This reaction
converts the small cage-like structures into a long-range network
structure. The conversion occurs through the opening up of the
cage molecules and subsequent joining with neighboring molecules
to form larger mesh-like structures.
EBL resist crosslinking can also be induced by 157 nm wavelength
light. The energy of a single photon of light at 157 nm wavelength
is evaluated to be 7.9 eV which is very close to the above rough
calculation of the activation energy.
Wafer inventory
Electron-beam Lithography
Fabrication of
two-dimensional photonic crystal waveguides for 1.5 um in silicon
by deep anisotropic dry etching
Characterization of near-field holography grating masks for
optoelectronicslfabricated by electron beam lithography
Electron Beam lithography as a versatile nanostructuring technique
If you don't find what you're looking for,
Contact Us.
We may have a suitable product that's not listed, or we may be
able to develop a material to fit your specific needs.
Tel : (02)2217-3442 / Fax : (02)2704-4070
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