电子束能量越高，波长越短。一般为0.1nm。利用尺寸小的电子束在光刻胶上直写，不需掩膜板。可用电磁场聚焦。用于掩膜板的制作。光刻胶为PMMA。可作10nm的解决方案。

電子束光刻（electron beam lithography）是一種以電子束為工具的奈米制作技術，它是利用電子束在光阻上繪製奈米圖案，再經後續顯影步驟，即可製作出線寬僅數奈米的高解析結構。

旋寶好化學提供各種固含量、分子量的PMMA （分子量為950K,600K,200，50K等）,PMMA/MA聚合物，耐刻蝕電子束正光阻，高解析度電子束正光阻，混合曝光用正光阻，LIGA用光阻等

旋寶好化學拥有正型和負型兩大類電子束光阻系列,正型電子束光阻可用於掩膜版製作,金屬剝離 Lift-Off 和電鍍掩膜,負型電子束光阻可廣泛用於微電子器件的電流製作和光學器件的微納加工,滿足各種膜厚和高寬比的要求

DLC E-beam resist has been designed to maximize the throughput and resolution capabilities of electron beam lithography. Its attributes of high sensitivity, greater process tolerance, and easy alignment result in efficient use of expensive equipment. Because this resist is novolac based and aqueous alkaline developable, it is non-swelling, and thus provides greater resolution and critical dimension control.

Electron-beam lithography (EBL) is a lithographic process where a tightly focused beam of highly accelerated (10-50kV) electrons is used to define high resolution patterns .Unlike contact printing photolithography, EBL does not need a physical mask to transfer patterns into the resist.in electron-beam resist.
EBL is more suitable for defining high resolution (sub-micron) features as compared to exposing large areas ( > 100 um).

EBL resolution (typically 10 nm in diameter).

During electron-beam exposure, highly energetic electrons provide the activation energy to break the weak Si-H bonds and promote formation of the stronger siloxane (Si-O-Si) bonds. Electron-beam irradiation thus causes resist cross-linking. This reaction converts the small cage-like structures into a long-range network structure. The conversion occurs through the opening up of the cage molecules and subsequent joining with neighboring molecules to form larger mesh-like structures.

EBL resist crosslinking can also be induced by 157 nm wavelength light. The energy of a single photon of light at 157 nm wavelength is evaluated to be 7.9 eV which is very close to the above rough calculation of the activation energy.

Negative E-Beam		Positive E-Beam
	NR6-1000EB  0.1µm - 0.4µm NR6-1500EB  0.25µm - 1.4µm		PR6-50k  0.02µm - 0.08µm PR6-200k  0.02µm - 0.15µm PR6-600k  0.02µm - 0.74µm PR6-950K  0.25µm - 0.80µm
Temperature resistance < 130°C

Low-Noise Metamorphic HEMTsWith Reflowed 0.1-um T-Gate
Wafer inventory
Electron-beam Lithography
Fabrication of two-dimensional photonic crystal waveguides for 1.5 um in silicon by deep anisotropic dry etching
Characterization of near-field holography grating masks for optoelectronicslfabricated by electron beam lithography
Electron Beam lithography as a versatile nanostructuring technique



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