電子束正光阻適合目前各種電子束曝光的應用。過濾後顆粒尺寸小於0.2微米,提供積體電路生產中掩膜加工的需求。PMMA可用於多層製程,可附著於玻璃、金屬和矽等材料的表面。用低固體含量的型號可以得到30nm膜厚,適合製成奈米圖形。
The e-beam resists
series 50K- 950K(in chlorobenzene), 50K- 950K(in ethyl lactate)
and 950K (in anisole) are positive working resists suitable for
all kinds of e-beam applications. These resists are filtered to a
particle size of 0.2 µm.
The resists are designed
to meet critical geometry requirements of mask production in the
advanced integrated circuit fabrication. The PMMA-polymer layers
are distinguished by an excellent adhesion on glass, silicon and
metal.
The polymer 50K has an
about 20% higher sensitivity as the polymer 950K. The developed
patterns are thermal stable up to 120 °C.
The resists 50K- 950K(in
chlorobenzene), 50K- 950K(in ethyl lactate) and 950K (in anisole)
can be used for multilayer processes and planarisation. Resists
with low solids content for resist thickness down to 30 nm are
suitable especially for the nanometer lithography.
Positive Resists |
Resist
PMMA 50K in chlorobenzene
PMMA 200K in chlorobenzene
PMMA 600K in chlorobenzene
PMMA 950K in chlorobenzene
PMMA 50K in ethyl lactate
PMMA 200K in ethyl lactate
PMMA 600K in ethyl lactate
PMMA 950K in anisole
PMMA 950K in ethyl lactate |
Thickness
0.02µm - 0.30µm
0.02µm - 0.59µm
0.03µm - 1.25µm
0.03µm - 1.70µm
0.02µm - 0.08µm
0.02µm - 0.15µm
0.02µm - 0.74µm
0.25µm
;
0.80µm
0.03µm - 0.27µm |
Thermal stable up to 120 °C |
PMMA 950K in anisole
(low MW methyl-methacrylate (MMA) and
methacrylic acid (MAA) copolymers in ethyl lactate): a positive
resist with poor resolution but with significantly higher
sensitivity than the higher MW PMMA resists above; used primarily
as the top layer in a bi-layer resist scheme for T-Gate
fabrication, and utilizes an inert solvent developer (1:3 MIBK:IPA)
A NOVEL ASYMMETRIC GATE
RECESS PROCESS FOR INP HEMTS![](icoLeaf.gif)
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