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GaN直流對直流轉換器
  AlN Template
  GaN HEMT
  Epi-ready wafer
   
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New Substrate for Ga-N Based LEDs

Gallium Nitride Epi Wafers on Sapphire Substrates
Gallium Nitride Epi Wafers on SiC Substrates

Aluminum Nitride Epi Wafers on Sapphire Substrates
Aluminum Nitride Epi Wafers on SiC Substrates

Gallium Nitride Epi Wafers on Sapphire Substrates

Novel Substrate for Blue/UV LED , High Frequency MMIC, High Temperature Electronic Production

GaN Epitaxial Wafers are the ideal substrates for GaN homoepitaxial growth and device manufacturing. 


Substrate for III-V Nitrides Epitaxy.

Applications

  • New type of substrate for GaN-based LEDs. For more details, please click here.
  • GaN Epitaxial Wafers may be used as substrates for III-V nitride epitaxial growth by MBE, MOCVD and CVD.
  • No buffer layer is required. 


 

Thickness of GaN epilayer 2 ~10 µm
Wafer diameter 50 mm
FWHM of X-ray w-scan rocking curve < 600 arcsec
Initial substrate c-plane sapphire
Orientation  (0001)
Structure wurtzite
Conductivity n-type
Surface as grown 

Depth profile for concentration Nd-Na
in GaN epitaxial layer

 

Photoluminescence spectrum
of GaN epitaxial layer

 

Gallium Nitride Epi Wafers On Sapphire Substrates

Gallium Nitride epi wafers on SiC substrates
Applications
  • GaN Epitaxial Wafers may be used as substrates for III-V nitride epitaxial growth by MBE, MOCVD and CVD.
  • No buffer layer is required. 
  • GaN Epitaxial Wafers are the ideal substrates for GaN homoepitaxial growth and device manufacturing.
     

Technology
Gallium Nitride Epitaxial Wafer consists of a thin undoped GaN epitaxial layer grown by hydride vapor phase epitaxy (HVPE) directly on (0001)Si face on-axis 6H-SiC or 4H-SiC substrate.

Thickness of GaN epilayer 0.1 ~0.3 µm
Diameter 50 mm
Substrate (0001) on axis 6H-SiC or 4H-SiC
Orientation  (0001)
Structure wurtzite
FWHM of X-ray w-scan rocking curve < 250 arcsec
Nd ?Na concentration 1017 ~1018 cm-3
Surface as grown 

Additional Information

  • GaN layers and SiC substrates are electrically conducting.  Silicon carbide insures excellent heat removal from nitride device structure, which is important for high-power devices. GaN/SiC wafers may be cleaved providing mirror-like facets for nitride laser diodes. 
  • GaN layers could be grown on SiC substrates supplied by customers.

 
 

Aluminum Nitride Epi Wafers on Sapphire Substrates

Aluminum Nitride Thin Layers for III-V Nitride Epitaxy 
and
High Frequency Applications
Applications
  • AlN Epitaxial Wafers may be used as substrates for III-Nitrides epitaxial growth by MBE, MOCVD and CVD
  • AlN layers have good insulation properties for fabrication of Nitride-based  FET structures. 
  • Good piezoelectric properties of AlN make our layers an excellent base for Surface Acoustic Wave devices. 
Thickness of AlN epilayer 0.1 ~0.3 mm
Diameter 50 mm
Substrate c-plane sapphire
Orientation (0001)
Structure wurtzite
Conductivity insulating
Surface as grown 

  XRD spectrum (w, 2Q) for thin AlN layer grown on sapphire

 

Aluminum Nitride Epi Wafers on SiC Substrates

Aluminum Nitride Thin Layers for Nitrides Epitaxy 
and  High Frequency Applications
Applications
  • AlN Epitaxial Wafers may be used as substrates for III-Nitrides epitaxial growth by MBE, MOCVD and CVD
  • AlN layers have good insulation properties for fabrication of Nitride-based  FET structures. 
  • Good piezoelectric properties of AlN make our layers an excellent base for Surface Acoustic Wave devices. 

 

Thickness of AlN epilayer 0.1 ~0.2 µm
Diameter 50 mm
Substrate (0001) on- or off-axis 6H-SiC
Orientation  (0001) on- & off-axis
Structure wurtzite
Conductivity insulating
Surface as grown 


 


X-ray rocking curve (?-scan) from AlN
/SiC

RHEED pattern image from AlN/SiC

 




Growth of a GaN Epilayer on a Si (111) Substrate by Using an AlN/GaN Superlattice and Application to a GaN Microcavity Structure with Dielectric-Distributed Bragg Reflector

Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting
Growth and properties of GaN on Si substrates by rapid thermal process low-pressure metalorganic chemical vapor deposition
 


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