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XBH provide
high-quality InAlN/GaN high electron mobility transistors (HEMTs) structure
on Si(111) substrate by metalorganic chemical vapor deposition (MOCVD).
X-ray diffraction measurements revealed that InAlN/GaN heterostructures
grown under optimal conditions have flat surface and abrupt heterointerface.
Electron mobility of about 1,200 and over 1,800cm^2/V・s
are obtained for InAlN/GaN heterostructures without and with AlN interlayer,
respectively. These mobility values are the highest ones ever reported for
InAlN/GaN grown on Si substrates. DC characteristics of HEMT with 1g=0.6μm
showed good pinch-off characteristics regardless of whether or not there was
an AlN interlayer. The value of Idss was around 1A/mm, and the maximum gm
was about 200mS/mm
Application examples
RF applications such as power amplifier
Vehicle power devices
Power electronics such as power supplies, DC/DC converter, etc.
Environment resistant devices
Benefits of using GaN
High power
High frequency
High efficiency
Low power consumption, energy saving
High-temperature robustness
Exceed the limitations of current Si power devices
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Basic Properties |
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i-AlGaN |
5 nm |
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n-Al0.25Ga0.75N 20 nm |
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i-AlGaN |
3 nm |
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Substrate |
Si
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i-GaN: |
3
µm |
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AlN Buffer layer |
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If you don't find what you're looking for,
Contact Us.
We may have a suitable product that's not listed, or we may be
able to develop a material to fit your specific needs.
Tel : (02)2217-3442 / Fax : (02)2704-4070
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