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AlGaN/GaN HEMT
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   

   

   
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XBH provide high-quality InAlN/GaN high electron mobility transistors (HEMTs) structure on Si(111) substrate by metalorganic chemical vapor deposition (MOCVD). X-ray diffraction measurements revealed that InAlN/GaN heterostructures grown under optimal conditions have flat surface and abrupt heterointerface. Electron mobility of about 1,200 and over 1,800cm^2/Vs are obtained for InAlN/GaN heterostructures without and with AlN interlayer, respectively. These mobility values are the highest ones ever reported for InAlN/GaN grown on Si substrates. DC characteristics of HEMT with 1g=0.6μm showed good pinch-off characteristics regardless of whether or not there was an AlN interlayer. The value of Idss was around 1A/mm, and the maximum gm was about 200mS/mm

Application examples

RF applications such as power amplifier
Vehicle power devices
Power electronics such as power supplies, DC
/DC converter, etc.
Environment resistant devices

Benefits of using GaN

High power
High frequency
High efficiency
Low power consumption, energy saving
High-temperature robustness
Exceed the limitations of current Si power devices

Basic Properties  
i-AlGaN 5 nm

n-Al0.25Ga0.75N 20 nm

i-AlGaN 3 nm
Substrate Si
i-GaN: 3 µm

AlN Buffer layer




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