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Aluminum Oxide(Sapphire , Al203)
  Silicon Carbide(SiC wafers)
  Gallium Nitride(GaN)
  Gallium Phosphide(Gap)
  Gallium Arsenide(GaAs)
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   

   

   
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Basic Properties  
Crystal Structure: Hexagonal System
Lattice: a=4.785A, c=12.991A
Density: 3.98g/cm3
Transmission Range 0.15-5.5µm
Melting Point: 2042 C
Specific Heat: 0.418W s/g/k
Thermal Conductivity: 25.12W/m/k(@100 C)
Thermal Shock Resistance: 790W/m
Thermal Expansion Coefficient: 5.8´ 10-6/K
  dn/dt (@633nm) 13´ 10-6/K
Mohs Hardness: Mohs 9
Refractive Index(no): 1.83(0.26mm), 1.76(0.63mm),1.58(5.57mm)

 

Epi-ready Sapphire substrate Spec
2 inches( 50.8x0.43mm)

Epi-ready Sapphire substrate Spec

2 inches( 50.8x0.33mm)

Diam Tolerance ±0.05mm Diam Tolerance ±0.05mm
Thickness Tolerance ±0.025mm Thickness Tolerance ±0.025mm
Parallelism <3 arc min. Parallelism <3 arc min.
Perpendicularity <5 arc min. Perpendicularity <5 arc min.
Roughness <1nm Roughness <1nm
Backsurface Roughness 0.4 to 1.0microns Backsurface Roughness 0.4  to 1.0microns
Flatness <5 µm Flatness <5 µm
TTV&BOW <25 µm TTV&BOW <25 µm
Orientation C-axis 0001 ±0.25° Orientation C-axis 0001 ±0.25°
ORF A-axis 11-20 ±0.3°, Length 16.0±1.0mm ORF A-axis 11-20 ±0.3°, Length 16.0±1.0mm
Cleaning 100 grade clean room Cleaning 100 grade clean room
Packaging Under Nitrogen Packaging Under Nitrogen




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