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AlGaN/GaN HEMT
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   
   

   

   
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In the field of nitride semiconductors, an “AlN template” refers to a composite substrate which includes a thin layer of AlN deposited epitaxially on a foreign substrate such as sapphire or silicon carbide. XBH’s AlN templates are built on sapphire and are available from 2" to 150mm in diameter.

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Advantage :

Better wavelength uniformity

Higher LED brightness
Better nucleation repeatability than low temperature MOCVD nucleation

Advanced PVDNC reactor purchase is possible from Our (R&D tools) or from our equipment partners (production tools) to enable tech transfer of this process to your facility

AlN Templates on c-plane Sapphire (00.2) (Specification sheet)
 

Grade

Macro Defects

Substrate Diameter

Thickness (nm)

Part Number

Production <5/cm2 2" 25 AT.Sap.050.U.0025.B
350 AT.Sap.050.U.0350.B
1000 AT.Sap.050.U.1000.B
3" 25 AT.Sap.075.U.0025.B
350 AT.Sap.075.U.0350.B
1000 AT.Sap.075.U.1000.B
100mm 25 AT.Sap.100.U.0025.B
350 AT.Sap.100.U.0350.B
1000 AT.Sap.100.U.1000.B
Rider >10/cm2 2" 25 AT.Sap.050.U.0025.D
350 AT.Sap.050.U.0350.D
1000 AT.Sap.050.U.1000.D
3" 25 AT.Sap.075.U.0025.D
350 AT.Sap.075.U.0350.D
1000 AT.Sap.075.U.1000.D
100mm 25 AT.Sap.100.U.0025.D
350 AT.Sap.100.U.0350.D
1000 AT.Sap.100.U.1000.D
Custom Alternate Substrates: SiC, Patterned Sapphire
Alternate Orientations: a-plane AlN Templates on r-plane sapphire [11.0]
m-plane AlN Templates on m-plane sapphire [10.0]
Alternate Polish: Double side polish
Alternate Thicknesses: Contact us for your custom thickness requirements.
 

 

AlN Templates on Silicon (Specification sheet)
 

Grade

Macro Defects

Substrate Diameter

Thickness (nm)

Part Number

Production <5/cm2 2" 25 AT.Sil.050.U.0025.B
50 AT.Sil.050.U.0050.B
200 AT.Sil.050.U.0200.B
3" 25 AT.Sil.075.U.0025.B
50 AT.Sil.075.U.0050.B
200 AT.Sil.075.U.0200.B
100mm 25 AT.Sil.100.U.0025.B
50 AT.Sil.100.U.0050.B
200 AT.Sil.100.U.0200.B
Custom Alternate Substrates: SiC, Patterned Sapphire
Alternate Polish: Double side polish
Alternate Thicknesses: Contact us for your custom thickness requirements.
 

 Specification Sheet Characterization Methods

Characterization of AlN Templates as shown in our specification sheets is completed using the following methods:

Wafer thickness, Bow and TTV are determined by a Sigmatech thickness mapper for round substrates. Square substrates are measured manually at predetermined points on the wafers.

Wafer orientation is determined by x-ray diffraction.

Conductivity is determined by Lehighton (n-type, semi-insulating) and/or Corema measurements (semi-insulating) and/or Hall measurements for our boule recipes, but are not made on all wafers shipped.

Dislocation density is determined via etch pit density measurements followed by AFM and/or micro-cathodoluminescence (Micro-CL), but are not made on all wafers shipped.

Macro defects are on the surface of the wafer and are counted by visual inspection.

Surface roughness information is determined by atomic force microscopy (AFM) for the front surface finish. The typical image size for the measurement is 20x20µm.

Epitaxial Film thickness for films under 5um thick is determined via Filmetrix or Wyko white light interferometers. Film thickness for films above 5um is typically determined by weight.




If you don't find what you're looking for, Contact Us. We may have a suitable product that's not listed, or we may be able to develop a material to fit your specific needs. Tel : (02)2217-3442 / Fax : (02)2704-4070
 

 

 

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