In the field of nitride semiconductors, an “AlN template” refers to a composite substrate which includes a thin layer of AlN deposited epitaxially on a foreign substrate such as sapphire or silicon carbide.
XBH’s AlN templates are built on sapphire and are available from 2" to 150mm in diameter.
PVDNC has excellent scalability which results in lower cost of ownership when ramping production
Better wavelength uniformity
Higher LED brightness
Better nucleation repeatability than low temperature MOCVD nucleation
Advanced PVDNC reactor purchase is possible from Our (R&D tools) or from our equipment partners (production tools) to enable tech transfer of this process to your facility
Sheet Characterization Methods
Characterization of AlN Templates as shown in our specification sheets is
completed using the following methods:
Wafer thickness, Bow and TTV are determined by a Sigmatech thickness mapper for
round substrates. Square substrates are measured manually at predetermined
points on the wafers.
Wafer orientation is determined by x-ray diffraction.
Conductivity is determined by Lehighton (n-type, semi-insulating) and/or
Corema measurements (semi-insulating) and/or Hall measurements for our boule
recipes, but are not made on all wafers shipped.
Dislocation density is determined via etch pit density measurements followed by
AFM and/or micro-cathodoluminescence (Micro-CL), but are not made on all wafers
Macro defects are on the surface of the wafer and are counted by visual
Surface roughness information is determined by atomic force microscopy (AFM) for
the front surface finish. The typical image size for the measurement is 20x20µm.
Epitaxial Film thickness for films under 5um thick is determined via Filmetrix
or Wyko white light interferometers. Film thickness for films above 5um is
typically determined by weight.
If you don't find what you're looking for,
We may have a suitable product that's not listed, or we may be
able to develop a material to fit your specific needs.
Tel : (02)2217-3442 / Fax : (02)2704-4070