PVDNC has excellent scalability which results in lower cost of ownership when ramping production

Advantage :

Better wavelength uniformity

Higher LED brightness
Better nucleation repeatability than low temperature MOCVD nucleation

Advanced PVDNC reactor purchase is possible from Our (R&D tools) or from our equipment partners (production tools) to enable tech transfer of this process to your facility

Characterization of AlN Templates as shown in our specification sheets is completed using the following methods:

Wafer thickness, Bow and TTV are determined by a Sigmatech thickness mapper for round substrates. Square substrates are measured manually at predetermined points on the wafers.

Wafer orientation is determined by x-ray diffraction.

Conductivity is determined by Lehighton (n-type, semi-insulating) and/or Corema measurements (semi-insulating) and/or Hall measurements for our boule recipes, but are not made on all wafers shipped.

Dislocation density is determined via etch pit density measurements followed by AFM and/or micro-cathodoluminescence (Micro-CL), but are not made on all wafers shipped.

Macro defects are on the surface of the wafer and are counted by visual inspection.

Surface roughness information is determined by atomic force microscopy (AFM) for the front surface finish. The typical image size for the measurement is 20x20µm.

Epitaxial Film thickness for films under 5um thick is determined via Filmetrix or Wyko white light interferometers. Film thickness for films above 5um is typically determined by weight.