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Xenon Difluoride (XeF2)
  Chlorine trifluoride (ClF3)
  Bromine Trifluoride (BrF3)
   
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XeF2刻是各向同性的XeF2氣相矽蝕刻系統。用於去除Si作為犧牲層,XeF2去除是用於MEMS器件最好的釋放製程之一。XeF2除了Si也可以刻蝕Ta,W,Mo等其他能被SF6等離子體刻的材料

XeF2熔點低,25° C時蒸汽壓為 4Torr,對矽具有很好的蝕刻作用,對Al 、SiO2 、SiNx、光阻劑等具有很好刻蝕選擇比。蝕速率 較快,可以達到1um/min XeF2與水可以反應,生成氫氟酸 。氣態蝕,沒有液體張力問題的干擾  適合高深寬比製程

XeF2與矽反應分為以下步驟:
非游離態的XeF2吸附在矽表面
XeF2分解,產生F
F基與矽反應,生成SiF4
反應產物分子SiF4形成氣相產物
不發生反應的殘餘氣體(分解產生的Xe)從矽表面上揮發。對於CHF3、CF4以CCl4刻氣體,同樣情況下自發發生反應的機率很小,因此需要應用等離子體技術來產生反應基F,而如果採用XeF2,在沒有等離子體放電的情況下就可以得到高速率的矽刻。蝕刻反應可用下述反應式描述:2XeF2+Si→2Xe(g)↑+SiF4(g)↑

在蝕刻反應中SiF4是主要的反應產物,但是也有少量的其他反應副產物,包括SiF3、SiF2、SiF以及Si2F6。這些反應產物有時會沉積在刻表面,影響刻蝕的均勻性,與其他矽刻蝕方法相比採用XeF2刻矽具有一定的優越性。

基片可選擇性大:由於蝕完全是一個化學反應過程,由於殘餘氣體都可以排出,所以基片尺寸可以減小
橫向刻蝕:由於是各向同性的蝕刻,可以對掩模圖形進行掏空
成本較低:刻設備相對簡單,對環境的要求較低,不需要外加電源對氣體進行電離。

    
               

蝕刻氣體
Xenon difluoride
(XeF2)AlSiO2Si3N4AuTiNiacrylic 光阻有極高的選擇性,故而適於CMOS元件的後處 .

Interhalogen
(
XeF2ClF2BrF2)具有氣體蝕刻的優點但不會產生粗糙的表面。蝕刻速率AlCuAuNi=1000:1SiO2:Si=3000:1Si3N4=400 – 800:1AZ4400AZ1518=1000:1

Xenon difluoride is a very powerful fluorinating agent, but it is one of the most stable xenon compounds. Like most covalent inorganic fluorides it is moisture sensitive. It decomposes on contact with light or water vapour. Xenon difluoride is a dense, white crystalline solid. It has a nauseating odour but low vapor pressure. It has a strong characteristic IR doublet at 550 cm−1 and 556 cm−1.

Material Specification Sheet Xenon Difluoride XeF2

SPECIFICATION

Material

Specification  (wt ppm)

Typical analysis (wt ppm)

XeF2

99.999 %

 99.9994 %

Al

 

0.63

Ca

 

0.30

Co

 

0.16

Cr

 

0.39

Cu

 

0.09

Fe

 

1.73

K

 

0.16

Li

 

0.02

Mg

 

0.32

Mn

 

0.04

Mo

 

0.21

Na

 

0.15

Ni

 

1.55

Total metals

< 10

5.75

Product is free of any XeF4 contamination
Supplied in PTFE bottles, gas cylinders or customer supplied containers

Physical properties

Physical form  Colourless/white crystals
Molecular weight
 169.29
Vapour pressure
 approximately 4 Torr (0.5 kPa) at 25° C
Melting point
 129° C
Boiling point
 114° C
Stable molecule up to 500° C
Density 4.32 g/
ml
Packing density 2 g
/ml
Soluble in water (25 g
/L at 0° C) and hydrolyses to form HF
Odor
 Ozone like



Synthesis, Properties and Chemistry of Xenon(II) Fluoride
A New Full-Dry Processing Method for MEMS
Rapid Sacrificial Germanium Etching Using Xenon Difluoride
Influence of Reaction with XeF2 on Surface Adhesion of Al and Al2O3 Surfaces
Determination of etching parameters for pulsed XeF2 etching of silicon using chamber pressure data
Design, fabrication and characterization of monolithic embedded parylenemicrochannels in silicon substrate
Silicon Etching in XeF2 Environment
XeF2 Etching of Epitaxial Nb2N for Lift-off or Micromachining of III-N Materials and Devices
Manipulating Etch Selectivities in XeF₂ Vapour Etching
Application of Dual-Doped TMAH Silicon Etchant in the Fabrication of a Micromachined Aluminum Flexing Beam Actuator
Etch Rates for Micromachining Processing
Dry silicon etching for MEMS
Etch Overview for Microsystems
 


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