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Polysilicon
  Silicon Oxide
  Nitride
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  Parylene Dimer
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製作較厚的圖負型光阻比正型光阻適合. 負型光阻有較好解析能力, 圖形縮小容易(光照速度快), 增加產能(烘烤及顯影時間較短), 降低生產成本

 

NR5-8000 5.8µm - 100µm


特色
:


容易洗淨 :
120°C
下可用丙酮完全洗乾淨,

耐高溫 : 180°C

 

NR9-8000P 6µm - 105µm


特色
:
 

附著力強, 不需粘著增進劑

易 洗淨,可用丙酮完全洗乾淨,

耐溫 : 100°C


 

NR5-8000 and NR9-8000P 適合製作 100 µm 厚度的.

NR5-8000 鍍金和deep RIE , through-holes in silicon, GaAs and InP, NR5-8000 deep RIE 最好Mask.

NR9-8000P 鍍銅, 鍍鎳和鍍錫,

NR5-8000 and NR9-8000P可製成超過 4:1. AR ratio的圖
 

      


Process Characterization of One Hundred Micron Thick Photoresist Films
 


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