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製作較厚的圖型負型光阻比正型光阻適合.
負型光阻有較好解析能力,
圖形縮小容易(光照速度快),
增加產能(烘烤及顯影時間較短),
降低生產成本
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NR5-8000 5.8µm - 100µm
特色:
容易洗淨 : 120°C
以 下可用丙酮完全洗乾淨,
耐高溫
:
180°C
NR9-8000P 6µm - 105µm
特色:
附著力強,
不需粘著增進劑
易
洗淨,可用丙酮完全洗乾淨,
耐溫
:
100°C
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NR5-8000 and NR9-8000P
適合製作
100 µm
厚度的圖型.
NR5-8000
鍍金和deep RIE
製程,
through-holes
in silicon, GaAs and InP, NR5-8000
是deep
RIE
最好的Mask.
NR9-8000P 鍍銅,
鍍鎳和鍍錫,
NR5-8000 and NR9-8000P可製成超過
4:1. AR ratio的圖 型
Process
Characterization of One Hundred Micron Thick Photoresist Films
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