System dimensions (not
including attached subsystems): 720 mm wide X 650 mm deep X
1530 mm high
Height to top of LCD monitor: 1760 mm
Weight approximately: 225 kg
System Geometry
The
Xenon Difluoride Etching
system
is delivered in its
standard configuration with two xenon difluoride expansion
chambers and the provision for the installation of two xenon
difluoride source bottles (not included with the system).
Wafer capacity
The
Xenon Difluoride Etching system
is designed to be manually loaded for superior substrate
geometry flexibility. This flexibility is a key feature since
it allows the easy processing of MEMS devices ranging from die
sized devices, very fragile or thin substrates, and standard
full wafers.
Wafer size limitations
The
Xenon Difluoride Etching system
includes two versions:
B model designed to accommodate 6" wafers or smaller parts
C model designed to accommodate 8" wafers or smaller parts |
![](xetch.2.jpg) |
![](xrf.gif)
Xetch Xenon difluoride Etching system Lab
procedure![](icoLeaf.gif)
Deep anisotropic
ICP plasma etching designed for high volume MEMS manufacturing![](icoLeaf.gif)
If you don't find what you're looking for,
Contact Us.
We may have a suitable product that's not listed, or we may be
able to develop a material to fit your specific needs.
Tel : (02)2217-3442 / Fax : (02)2704-4070
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