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The performance of an
OLED device is
controlled chemical
doping of organic
materials.
By controlled n-doping
of the electron
transport material and
pdoping of the hole
transport material, the
conductivity can be
raised several orders of
magnitude above the
intrinsic conductivity
of the respective pure
material. The resulting
device structure is
often referred to as a
p-i-n device, as it
consists of an intrinsic
emission layer and of p-
and n-doped hole- and
electron-transport
layers, respectively.
The principle of doping
is to provide additional
mobile charge carriers
by adding constituents,
which either donate
electrons to the LUMO
states (n-type doping)
or remove electrons from
the HOMO states (p-type
doping).
OLED Polymeric Emitters (PLED)
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綠色發光材料 |
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OPA6495 - TAB-PFH
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藍色發光材料 |
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OPA6672 - Poly(9,9-dioctylylfluorenyl-2,7-diyl) |
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紅色發光材料 |
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OHA9576 - MEH-PPV
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黃色發光材料 |
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OPA9903 - PFBT
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OLED Small Molecule Emitters (LED)
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綠色發光材料 |
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OSD4487 - AlQ3 |
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藍色發光材料 |
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OPA6789 - Ir(ppy)3
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紅色發光材料 |
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OPA5632 - DCJTI
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黃色發光材料 |
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OPA6577 - ZnHQ
Delivery in 1-2
weeks
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低色溫OLED元件
UV-vis and fluorescence
spectra of Conjugated
Polymers and CPdots
Matrix influence on the
OLED emitter
Ir(btp)2(acac) in
polymeric host materials
– Studies by persistent
spectral hole burning
Emitting Materials I -
Poly(p-phenylene
vinylene) (PPV)
If you don't find what you're looking for,
Contact Us.
We may have a suitable product that's not listed, or we may be
able to develop a material to fit your specific needs.
Tel : (02)2217-3442 / Fax : (02)2704-4070
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