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Low-molecular-weight luminescent
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The performance of an OLED device is controlled chemical doping of organic materials.
By controlled n-doping of the electron transport material and pdoping of the hole transport material, the conductivity can be raised several orders of magnitude above the intrinsic conductivity of the respective pure material. The resulting device structure is often referred to as a p-i-n device, as it consists of an intrinsic emission layer and of p- and n-doped hole- and electron-transport layers, respectively. The principle of doping is to provide additional mobile charge carriers by adding constituents, which either donate electrons to the LUMO states (n-type doping) or remove electrons from the HOMO states (p-type doping).

 

OLED Polymeric Emitters (PLED)
 
  綠色發光材料  
OPA6495 - TAB-PFH      
  藍色發光材料  
OPA6672 - Poly(9,9-dioctylylfluorenyl-2,7-diyl)
  紅色發光材料  
OHA9576 - MEH-PPV      
黃色發光材料
OPA9903 - PFBT          

OLED Small Molecule Emitters (LED)
 
  綠色發光材料  
OSD4487 - AlQ3      
  藍色發光材料  
OPA6789 - Ir(ppy)3  
  紅色發光材料  
OPA5632 - DCJTI     
黃色發光材料
OPA6577 - ZnHQ       Delivery in 1-2 weeks



低色溫OLED元件
UV-vis and fluorescence spectra of Conjugated Polymers and CPdots
Matrix influence on the OLED emitter Ir(btp)2(acac) in polymeric host materials – Studies by persistent spectral hole burning
Emitting Materials I - Poly(p-phenylene vinylene) (PPV)




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