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210-LRS2

Type: Robot machine for carrier-based final cleaning of silicon wafers.
Product: clean and dry silicon wafers (125 & 156 mm) ready for inspection, saw damage removal or texturing.
Input: carriers with pre-cleaned silicon wafers.
Removed contamination: traces of slurry, fingerprints.
Process: Ultrasonic cleaning - Ultrasonic cleaning . Spray Rinsing . Ultrasonic rinsing . Rinsing . Lift-Out.
Cleaning chemistry: XBH clean 110, NaOH
Periphery: 2 pump filter units, dosage of chemicals, di-water treatment.
USP
s: Multifrequency ultrasonics 25/45 kHz for cleaning and rinsing, pH-controlled spray regime, dry wafers leave the machine without drying by hot air or infrared system.

 

200-LRS2

Type: Robot machine for carrier-based final cleaning of silicon wafers.
Product: clean and dry silicon wafers (125 & 156 mm) ready for inspection, saw damage removal or texturing.
Input: carriers loaded with pre-cleaned silicon wafers.
Removed contamination: traces of slurry, fingerprints.
Process: Ultrasonic cleaning . Ultrasonic cleaning . Spray Rinsing . Ultrasonic rinsing . Rinsing . Lift-Out.
Cleaning chemistry: XBH clean 110, NaOH
Periphery: 2 pump filter units, dosage of chemicals, di-water treatment.
USP
s: Multifrequency ultrasonics 25/45 kHz for cleaning and rinsing, pH-controlled spray regime, dry wafers leave the machine without drying by hot air or infrared system, can be integrated in back-tracing systems.
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Wafer Cleaning

A sequence of chemistries is typically used to clean silicon wafers. This chemical sequence does not attack the silicon material, but selectively
removes the organic and inorganic contamination that resides on the wafer surface. The following is a typical RCA process; many variations to the ordering of the sequence and chemical ratios are used throughout the industry.

General Clean: A general cleaning is accomplished by using a mixture of Sulfuric Acid and Hydrogen Peroxide. Mixing these chemicals is dangerous and generates extreme heat. This industry standard clean removes organic and inorganic contamination from the wafer. 2-10 minute clean is recommended. Strong rinse in DI water is required after this cleaning step.

Particle Removal: A Megasonic clean (at about 70 C) in a 5:1:1 ratio mixture of DI water: Ammonium Hydroxide : Hydrogen Peroxide will remove silica and silicon particles from the wafer, as well as remove certain organic and metal surface contamination. 2-10 minute clean is recommended. Strong rinse in DI water is required after this cleaning step.

Oxide Removal: A 15-60 second dip in 1:20 HF:DI water will remove the native oxide layer and any contamination in the oxide from the wafer surface. HF is extremely dangerous and must be handled with great care. Strong rinse in DI water is required after this cleaning step.

Metal Contamination Removal: A Megasonic clean (at about 70 C) in a 6:1:1 ratio mixture of DI water: HCL : Hydrogen Peroxide will remove certain ionic and metal surface contamination. 2-10 minute clean is recommended. Strong rinse in DI water is required after this cleaning step.

Spin Rinse Dry: Wafers should be rinsed and dried in a standard spin-rinse dryer.  Megasonic agitation is commonly used with the chemical bath and most commonly with the particle removal step. Also, heavy DI rinse steps are used between each chemical treatment. DI rinsing may use dump-baths, over-flow baths, and spray-dump baths, as well as combinations. Proper removal of all cleaning chemistry with 18MegaOhm DI water is critical and needed after each chemical bath. Any text book on the topic of semiconductor or silicon processing is an excellent resource for further information regarding the RCA cleaning process.

There are commercially available premixed cleaning solutions that can be used directly to clean wafers and serve the same purpose of the RCA cleaning process. These chemicals typically achieve the function of several cleaning steps with one solution.

Surface Damage Effects in Ultrasonic Cleaning of Silicon Wafers
Resonance Ultrasonic Vibrations for In-line Crack Detection in Silicon Wafers and Solar Cells

 


 


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