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                  210-LRS2 
                  
                  Type: Robot machine 
                  for carrier-based final cleaning of silicon wafers. 
                  Product: clean and dry silicon wafers (125 & 156 mm) ready for 
                  inspection, saw damage removal or texturing. 
                  Input: carriers with pre-cleaned silicon wafers. 
                  Removed contamination: traces of slurry, fingerprints. 
                  Process: Ultrasonic cleaning - Ultrasonic cleaning . Spray 
                  Rinsing . Ultrasonic rinsing . Rinsing . Lift-Out. 
                  Cleaning chemistry: 
                  
                  DLC clean 110, NaOH 
                  Periphery: 2 pump filter units, dosage of chemicals, di-water 
                  treatment. 
                  USP’s: 
                  Multifrequency ultrasonics 25/45 
                  kHz for cleaning and rinsing, pH-controlled spray regime, dry 
                  wafers leave the machine without drying by hot air or infrared 
                  system. 
                  
                  
                     
                  
                  200-LRS2 
                  
                  Type: Robot machine 
                  for carrier-based final cleaning of silicon wafers. 
                  Product: clean and dry silicon wafers (125 & 156 mm) ready for 
                  inspection, saw damage removal or texturing. 
                  Input: carriers loaded with pre-cleaned silicon wafers. 
                  Removed contamination: traces of slurry, fingerprints. 
                  Process: Ultrasonic cleaning . Ultrasonic cleaning . Spray 
                  Rinsing . Ultrasonic rinsing . Rinsing . Lift-Out. 
                  Cleaning chemistry: 
                  
                  DLC clean 110, NaOH 
                  Periphery: 2 pump filter units, dosage of chemicals, di-water 
                  treatment. 
                  USP’s: 
                  Multifrequency ultrasonics 25/45 
                  kHz for cleaning and rinsing, pH-controlled spray regime, dry 
                  wafers leave the machine without drying by hot air or infrared 
                  system, can be integrated in back-tracing systems.. 
                   
                   
                  
                  
                  Wafer Cleaning
                  A 
                  sequence of chemistries is typically used to clean silicon 
                  wafers. This chemical sequence does not attack the silicon 
                  material, but selectively 
                  removes the organic and inorganic contamination that resides 
                  on the wafer surface. The following is a typical RCA process; 
                  many variations to the ordering of the sequence and chemical 
                  ratios are used throughout the industry.  
                  
                  General Clean: A 
                  general cleaning is accomplished by using a mixture of 
                  Sulfuric Acid and Hydrogen Peroxide. Mixing these chemicals is 
                  dangerous and generates extreme heat. This industry standard 
                  clean removes organic and inorganic contamination from the 
                  wafer. 2-10 minute clean is recommended. Strong rinse in DI 
                  water is required after this cleaning step. 
                  
                  Particle Removal: 
                  A Megasonic clean (at about 70 C) in a 5:1:1 ratio mixture of 
                  DI water: Ammonium Hydroxide : Hydrogen Peroxide will remove 
                  silica and silicon particles from the wafer, as well as remove 
                  certain organic and metal surface contamination. 2-10 minute 
                  clean is recommended. Strong rinse in DI water is required 
                  after this cleaning step. 
                  
                  Oxide Removal: A 
                  15-60 second dip in 1:20 HF:DI water will remove the native 
                  oxide layer and any contamination in the oxide from the wafer 
                  surface. HF is extremely dangerous and must be handled with 
                  great care. Strong rinse in DI water is required after this 
                  cleaning step.  
                  
                  Metal 
                  Contamination Removal: A Megasonic clean (at about 70 C) in a 
                  6:1:1 ratio mixture of DI water: HCL : Hydrogen Peroxide will 
                  remove certain ionic and metal surface contamination. 2-10 
                  minute clean is recommended. Strong rinse in DI water is 
                  required after this cleaning step. 
                  
                  Spin Rinse Dry: 
                  Wafers should be rinsed and dried in a standard spin-rinse 
                  dryer.  Megasonic agitation is commonly used with the chemical bath 
                  and most commonly with the particle removal step. Also, heavy 
                  DI rinse steps are used between each chemical treatment. DI 
                  rinsing may use dump-baths, over-flow baths, and spray-dump 
                  baths, as well as combinations. Proper removal of all cleaning 
                  chemistry with 18MegaOhm DI water is critical and needed after 
                  each chemical bath. Any text book on the topic of 
                  semiconductor or silicon processing is an excellent resource 
                  for further information regarding the RCA cleaning process. 
                  
                  There are 
                  commercially available premixed cleaning solutions that can be 
                  used directly to clean wafers and serve the same purpose of 
                  the RCA cleaning process. These chemicals typically achieve 
                  the function of several cleaning steps with one solution.   
                  
                   
                
                
                Surface Damage Effects in Ultrasonic Cleaning of Silicon Wafers  
                
                
                Resonance Ultrasonic Vibrations for 
                In-line Crack Detection in Silicon Wafers and Solar Cells  
                   
                                                          
                   
                
                                                         
                                                          
                                                        
                  
                                                        
                   
                      
                  
                                    
                                    
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