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AlN氮化鋁陶瓷基板具有優良的熱傳導性，可靠的電絕緣性，低的介電常數和介電損耗是大型積體電路、半導體模組電路及大功率器件的散熱和封裝材料；
可提高高分子材料熱導率和力學性能
AlN的熱擴散Coefficent近似Si， GaN，適合做半導體GaAs製程或芯片的基板。
特點 :
AlN基板
溫度傳導性
高承受電壓
Si、GaN和GaAs等的半導體類似的熱膨脹系數
可替代溫度傳導的有毒性BeO基板
SiN基板
高強度(高可靠性)
Si、GaN和GaAs等的半導體類似的熱膨脹系數
高承受電壓
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Property
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ASH-11
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ASH-11T |
ASH-11K |
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Physical
|
Density
|
g/cm3 |
3.30
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3.3
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3.3
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Vickers Hardness
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GPa |
11
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-
|
-
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Bending Strength
|
MPa |
300-400
|
350
|
350
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Thermal
|
Thermal
conductivity at RT
|
W/m·K
|
180
|
180
|
200
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Thermal conductivity
at 100°C
|
160
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-
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-
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Thermal expansion
coefficient RT-400°C
|
10-6/°C |
4.4
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4.6
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4.6
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Maximum allowable
use temperature
in air
|
°C |
1000
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|
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Electrical
|
Volume resistivity
|
ohm•cm |
＞1014
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-
|
-
|
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Dielectric constant
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at 1MHz
|
9.2
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8.8
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8.8
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Dielectric strength
|
kV/mm |
0.0003-0.0010
|
-
|
-
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Optical
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In-line
transmittance
|
at 5.5
µm
wavelegth |
15%
thickness:0.5mm
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-
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關於鋁氮化物細陶瓷常見問題解答
If you don't find what you're looking for,
Contact Us.
We may have a suitable product that's not listed, or we may be
able to develop a material to fit your specific needs.
Tel : (02)2217-3442 / Fax : (02)2704-4070
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