AlN氮化鋁陶瓷基板具有優良的熱傳導性,可靠的電絕緣性,低的介電常數和介電損耗是大型積體電路、半導體模組電路及大功率器件的散熱和封裝材料;
可提高高分子材料熱導率和力學性能
AlN的熱擴散Coefficent近似Si, GaN,適合做半導體GaAs製程或芯片的基板。
特點 :
AlN基板
溫度傳導性
高承受電壓
Si、GaN和GaAs等的半導體類似的熱膨脹系數
可替代溫度傳導的有毒性BeO基板
SiN基板
高強度(高可靠性)
Si、GaN和GaAs等的半導體類似的熱膨脹系數
高承受電壓
Property
|
ASH-11
|
ASH-11T |
ASH-11K |
Physical
|
Density
|
g/cm3 |
3.30
|
3.3
|
3.3
|
Vickers Hardness
|
GPa |
11
|
-
|
-
|
Bending Strength
|
MPa |
300-400
|
350
|
350
|
Thermal
|
Thermal
conductivity at RT
|
W/m·K
|
180
|
180
|
200
|
Thermal conductivity
at 100°C
|
160
|
-
|
-
|
Thermal expansion
coefficient RT-400°C
|
10-6/°C |
4.4
|
4.6
|
4.6
|
Maximum allowable
use temperature
in air
|
°C |
1000
|
|
|
Electrical
|
Volume resistivity
|
ohm‧cm |
>1014
|
-
|
-
|
Dielectric constant
|
at 1MHz
|
9.2
|
8.8
|
8.8
|
Dielectric strength
|
kV/mm |
0.0003-0.0010
|
-
|
-
|
Optical
|
In-line
transmittance
|
at 5.5
µm
wavelegth |
15%
thickness:0.5mm
|
-
|
|
關於鋁氮化物細陶瓷常見問題解答
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|